Abstract
Mercury cadmium telluride has successfully been grown from tellurium rich solutions. Solution growth offers a number of advantages over other thin film and bulk growth techniques, e.g. purification, thin film and bulk growth, low dislocation density, and inexpensive growth equipment. The principal solution growth techniques that have received the most attention for (Hg,Cd)Te so far have been liquid phase epitaxy(LPE), the traveling heater method(THM) and the solid state recrystallization(SSR) process. These techniques have provided very high quality material for various device structures. The solid state recrystallization process, the traveling heater method and liquid phase epitaxy are reviewed and their similarities described.
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