Abstract
This paper reviews the previous work on crystal growth, film preparation and epitaxial growth of CuInS 2, and provides solutions to clear the obstacles in the material preparation, which includes (i) large and regular-shape single crystals, (ii) large area thin films with accurate composition control, and (iii) high quality epitaxial layers. The best technique for the crystal growth is the travelling heater method, the best technique for the film preparation is the three source evaporation. The problems in liquid phase epitaxy and metalorganic vapor epitaxy for CuInS 2 are also addressed.
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