Abstract
Photoluminescence (PL) has been used to study defects in As + and Sb + implanted silicon after laser annealing by a Q switched Nd-glass laser beam. The depth distribution of the defects was determined by measuring the PL signals after successive removal of thin surface layers. The defect generation and transformation is described by a simple kinetic model. From this, depth distributions of defects after ion implantation and laser annealing can be calculated.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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