Abstract
Silicon solar cells are fabricated using ion implantation and laser annealing. An AM1 conversion efficiency of 10.5% is obtained without an antireflection coating in a cell ion-implanted with 4×1015 P+ ions/cm2 at 25 keV and laser annealed using a Q-switched ruby laser. This efficiency increases after low temperature furnace annealing as a result of improvement in open circuit voltage (Voc) and fill factor (FF). The dependence of Voc on furnace annealing temperature is examined by diode characteristics measurements and deep-level transient spectroscopy. The fact that Voc increases and diode reverse current density decreases as the furnace annealing temperature increases is related to the decrease in the number of residual defects near the junction.
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