Abstract
Heavily doped polycrystalline silicon layers are annealed by a Q-switch ruby laser and are characterized by electrical and crystallographic measurements, placing emphasis on MOS device applications. An annealing energy of less than 0.8 J/cm 2 is essential, because higher annealing energy causes anomalous melting of the polycrystalline silicon layer. Heavy phosphorus doping followed by ion implantation and laser annealing is found to be useful to lower the resistivity from the device application viewpoint. The lowest resistivity obtained by this double doping method is 2.5 × 10 –4 ohm-cm, which is about half that of by thermal annealing. Low temperature treatment after laser annealing cause resistivity increase, however, this double doped layer is stabler, and is attributed to the grain boundary effect on carrier inactivation.
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