Abstract
Optical absorption of implanted layers in silicon and gallium arsenide has been studied as a means of evaluating the restoration of surface layer crystallinity brought about by laser annealing. Simple transmission measurements using wavelengths near the crystalline absorption edge, as well as photoacoustic techniques have been used to measure the properties of the implanted region over a range of fluence from 10 12 to 10 16 cm –2 . Annealing of the surface layer is manifest by an increase of the transmitted signal level and by a decrease in the photoacoustic output voltage. The measurement is nondestructive, can have the high spatial resolution needed for a detailed examination of the variations of crystallinity across the surface and can be carried out rapidly and conveniently compared to other methods.
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