Abstract
Infrared optical properties of extremely heavily doped n-type Si, obtained by ion implantation and laser annealing, were studied. A new relation between free carrier effective mass ( m ∗) and carrier concentration (10 19 −5 × 10 21cm -3) was obtained. The value of m ∗ increases significantly with the increase of carrier concentration, when carrier concentration exceeds 10 21cm -3. The result is discussed in relation to the occupation of electrons in a new valley of the conduction band.
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