Photoelectrochemical performance of sprayed n-CdIn 2Se 4 photoanodes

Abstract

Cadmium indium selenide thin films have been synthesized by spraying mixture of equimolar solution concentrations of cadmium chloride, indium trichloride and selenourea in aqueous media onto preheated FTO coated glass substrates at optimized substrate temperature and solution concentration. The photoelectrochemical cell configuration of n-CdIn 2Se 4/(1 M NaOH + 1 M Na 2S + 1 M S)/C has been used for investigate the current–voltage characteristics under dark and white light illumination, photovoltaic output, spectral response, photovoltaic rise and decay characteristics. It reveals the film of CdIn 2Se 4 exhibits n-type conductivity. The junction quality factor in dark ( n d ) and light ( n l ), series and shunt resistance ( R s and R sh ), fill factor (FF) and efficiency ( η) for the cell have been estimated. Gartner’s model was used to calculate minority carrier diffusion length and donor concentration ( n D ). The observed efficiency and FF of PEC solar cell is 1.95% and 0.37% respectively. Mott–Schottky plot shows the flat-band potential ( V fb ) of CdIn 2Se 4 films is −0.655 V/SCE.