Abstract
Zinc indium selenide (ZnIn 2Se 4) thin films have been prepared by spraying a mixture of an equimolar aqueous solution of zinc sulphate (ZnSO 4), indium trichloride (InCl 3), and selenourea (CH 4N 2Se), onto preheated fluorine-doped tin oxide (FTO)-coated glass substrates at optimized conditions of substrate temperature and a solution concentration. The photoelectrochemical (PEC) cell configuration of n-ZnIn 2Se 4/1 M (NaOH+Na 2S+S)/C has been used for studying the current voltage ( I– V), spectral response, and capacitance voltage ( C– V) characteristics of the films. The PEC study shows that the ZnIn 2Se 4 thin films exhibited n-type conductivity. The junction quality factor in dark ( n d) and light ( n l), series and shunt resistance ( R s and R sh), fill factor (FF) and efficiency ( η) for the cell have been estimated. The measured (FF) and η of the cell are, respectively, found to be 0.435% and 1.47%.
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