Abstract
Cadmium indium selenide (n-CdIn 2Se4) thin films have been synthesized by spraying the mixture of an equimolar solutions of cadmium chloride [CdCl2], indium trichloride [InCl3] and selenourea [(NH2)2CSe] in aqueous media onto preheated fluorine doped tin oxide (FTO) coated glass substrates at optimized parameters of substrate temperature and solution concentration. The photoelectrochemical (PEC) cell configuration of n-CdIn2Se/(l MNaOH + 1 MNa2S + 1 M S)/C has been used for investigating the current—voltage (I–V) characteristics under dark and white light illumination, photovoltaic output, spectral response, photovoltaic rise and decay characteristics. The PEC study reveals the thin film of CdIn2Se4 exhibits n-type conductivity. The junction quality factor in dark (nd) and light (nl), series and shunt resistance (Rs and Rsh), fill factor (FF) and efficiency (η) for the cell have been estimated. The observed efficiency and FF of PEC solar cell is found to be 1.95 and 0.37% respectively. Mott-Schottky plot shows the flat-band potential (V fb) of n-CdIn2Se4/(l M NaOH + 1 M Na2S + 1 M S)/C cell to be—0.655 V/SCE.
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