Abstract
Indium-doped CdSSe thin films with varying concentration of indium were deposited on FTO coated glass substrates by spray pyrolysis technique. The cell configurations indium-doped CdSSe/1 M (Na2S + S+NaOH)/C were used to study the current–voltage, capacitance–voltage, photovoltaic power output and spectral response characteristics. These characteristics were evaluated through a wide range of performance parameters like junction quality factor in the light (nL), series and shunt resistances (Rs and Rsh), fill factor (FF) and efficiency (η). Careful inspection of these calculated parameters reveal that, the cell performance is enhanced after doping of CdSSe thin films by trivalent indium. The values of nd and nL are smallest 1.28 and 1.25 respectively, for the cell formed with 0.15 mol% indium in CdSSe thin film. The donor concentration is found to be of the order of 5.74 × 1019 cm−3. The power conversion efficiency and fill factor of PEC cell are found to improve from 0.79 % and 0.46 to 2.12 % and 0.49 respectively, with 0.15 mol% indium doping in CdSSe thin films.
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