Abstract
Polycrystalline undoped and indium-doped CdS0.2Se0.8 thin films were deposited on FTO-coated glass substrates by spray pyrolysis. The cell configurations CdS0.2Se0.8/1M (Na2S+S+NaOH)/C and In:CdS0.2Se0.8/1M (Na2S+S+NaOH)/C were used to study a wide range of photoelectrochemical characteristics including capacitance–voltage in the dark, current–voltage characteristics in the dark and under illumination, photovoltaic power output and spectral response and to perform electrochemical impedance spectroscopy studies. The study reveals that the films exhibit n-type conductivity. Various PEC parameters such as the junction ideality factor under illumination, series and shunt resistances, fill factor and efficiency have been estimated for the PEC cells formed with CdS0.2Se0.8 and indium-doped CdS0.2Se0.8 thin films. The efficiency and fill factor of these PEC cells are found to be improved from 0.79% and 0.46 to 2.12% and 0.49, respectively, with indium doping in CdS0.2Se0.8 thin films. Electrochemical impedance spectroscopy studies show that doping of indium into CdS0.2Se0.8 thin film improves the performance of resulting PEC cells.
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