Abstract
CdTeCdS heterostructures were prepared by evaporating CdTe onto photoconductive sintered CdS films doped with Cu. In the photoconductive spectrum an additional sensitivity peak appeared at 840 nm. The photoconductive mechanism was identified as photoconduction in the CdS film due to injected carriers through the CdTeCdS heterojunction. The dependence of the 840 nm sensitivity on Cu doping rate was described and the sensitivity spectrum due to the injected carriers was separated from the total spectrum.
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