Abstract
CdTeCdS heterostructures were prepared by evaporating CdTe onto photoconductive sintered CdS films doped with Cu. In the photoconductive spectrum an additional sensitivity peak appeared at 840 nm. The photoconductive mechanism was identified as photoconduction in the CdS film due to injected carriers through the CdTeCdS heterojunction. The dependence of the 840 nm sensitivity on Cu doping rate was described and the sensitivity spectrum due to the injected carriers was separated from the total spectrum.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
