Abstract
The phonon density of states (PDOS) of amorphous silicon carbide ( a- Si x C 1− x ) has been computed for compositions with x = 0.47, 0.5, 0.57, 0.69 and 0.80 based on an angular force model, in which only nearest-neighbour interactions are considered. The significance of the computed phonon density of states to the interpretation of Raman and infrared spectra of a- Si x C 1− x is discussed.
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