Tuning the hole transport layer in the Ca3SbI3 absorber-based solar cells to improve the power conversion efficiency

Abstract

The renewable energy field has been demonstrating a significant deal of interest in lead (Pb)-free inorganic halide perovskites because of their remarkable optical, mechanical, electrical, and structural properties. Investigators have been studying Ca3SbI3-based single junction photovoltaic cells in various layouts, such as an electron transport layer (ETL) constructed of SnS2 and three distinct hole transport layers (HTL) constructed of MoO3, CBTS, and Cu2O. We extensively analyzed various factors using SCAPS-1D simulation software, delving into aspects like the alignment of bands, layer thickness, defect levels, doping levels, interface defects, carrier concentrations, generation, recombination, voltage at the open circuit (VOC), current at the short circuit (JSC), fill factor (FF), and the efficiency of power conversion (PCE) using mathematical methods. The study states that the Cu2O HTL design reached its highest efficiency at 31.65 %, with an open circuit voltage (VOC) of 1.5013 V, a short circuit current (JSC) of 24.036941 mAcm−2, and a fill factor (FF) of 87.71 % and the CBTS HTL setup achieved a slightly lower efficiency of 29.43 %, with a VOC of 1.3946 V, a JSC of 24.05685 mA/cm2, and the value of an FF is 87.71 %. Conversely, the MoO3 HTL design efficiency at 24.7 %, with an open circuit voltage (VOC) of 1.2530 V, a short circuit current (JSC) of 22.846937 mAcm−2, and a fill factor (FF) of 86.29 % These findings offer valuable insights and a practical approach for developing affordable thin-film photovoltaic cells based on Ca3SbI3.