Abstract
Long lasting RHEED oscillations during MBE growth of GaAs and AlxGa1-xAs are observed. Using these oscillations, accurate measurements of GaAs, AlxGa1-xAs growth rates and the Al mole fraction x were performed during the growths. The phase of the RHEED oscillations was analyzed by computer and molecular beam shutters were operated at a particular phase. This computer controlled phase-locked epitaxy (PLE) was applied to grow precisely defined (GaAs)2(AlAs)2 bi-layer superlattices. Raman scattering spectra showed split lines characteristic of superlattices. This PLE method is invulnerable to molecular beam fluctuations.
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