Abstract
Long continuing intensity oscillations of the RHEED pattern in the [100] azimuth on a (001) oriented substrate were observed during MBE growth of GaAs and Al x Ga 1− x As. Using these oscillations, growth rates of GaAs and Al x Ga 1− x As, and the Al mole fraction x of the Al x Ga 1− x As were accurately monitored during the growth. The phase of the RHEED oscillations was analyzed by computer and molecular beam shutters were operated at a particular phase of the oscillations. This computer controlled phase-locked epitaxy (PLE) was used to grow precisely defined (GaAs) 2(AlAs) 2 bi-layer superlattices. Raman scattering spectra of the bi-layer superlattice showed split lines characteristic of superlattices. From TEM observation of a GaAs-AlAs multi-layered structure, it was verified that one cycle of oscillations corresponds to one monolayer growth of GaAs and AlAs. This PLE has a great advantage over the conventional MBE growth method for the precise control of very thin films and superlattice structures because it is invulnerable to fluctuations of molecular beam flux intensity.
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