Abstract
Abstract In this paper, phase change characteristics of Sb-rich Ga–SbSe materials were systematically investigated for ultralong-retention and high-speed phase change memory (PCM). Sb-rich Ga–Sb–Se materials possess crystallization temperature higher than 225 °C and activation energy of crystallization above 3.0 eV, which leads to outstanding data retention ability in excess of 135 °C for 10 years. The film thickness reductions of Ga 9 Sb 71 Se 20 and Ga 10 Sb 60 Se 30 are about 2.6% and 3.8%, respectively, which are smaller than that of Ge 2 Sb 2 Te 5 during the amorphous-to-crystalline phase transition. Ga 10 Sb 60 Se 30 film exhibits a reversible phase change under irradiation of optical pulse. The fast crystallization is due to the precipitation of Sb crystallites acting as a template to accelerate the crystallization.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
