Abstract
Sb rich Ge2Sb5Te5 materials are investigated for use as the storage medium for high-speed phase change memory (PCM). Compared with conventional Ge2Sb2Te5, Ge2Sb5Te5 films have a higher crystallisation temperature (∼200°C), larger crystallisation activation energy (3.13 eV), and a better data retention ability (100.2°C for ten years). A reversible switching between set and reset states can be realised by an electric pulse as short as 5 ns for Ge2Sb5Te5-based PCM cells, over 10 times faster than the Ge2Sb2Te5-based one. In addition, Ge2Sb2Te5 shows a good endurance up to 3 × 106 cycles with a resistance ratio of about three orders of magnitude. This work clearly reveals the highly promising potential of Ge2Sb5Te5 films for applications in high-speed PCM.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
