Abstract
The effects of Cr doping on the structural and electrical properties of Crx(Sb4Te)1−x materials have been investigated in order to solve the contradiction between thermal stability and fast crystallization speed of Sb4Te alloys. Cr0.06(Sb4Te)0.94 alloy is considered to be a potential candidate for phase change random access memory (PCM), as evidenced by a higher crystallization temperature (204 °C), a better data retention ability (137.6 °C for 10 years), a lower melting point (558 °C), a lower energy consumption, and a faster switching speed in comparison with those of Ge2Sb2Te5. A reversible switching between set and reset states can be realized by an electric pulse as short as 5 ns for Cr0.06(Sb4Te)0.94-based PCM cell. In addition, Cr0.06(Sb4Te)0.94 shows good endurance up to 1.1 × 104 cycles with a resistance ratio of about two orders of magnitude.
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