Abstract

AbstractThe continuous device structure degradation in nanoscaled device modeling restricts conventional tunnel field-effect transistor (TFET) to meet the best low-power applications. In this paper, dual-gate tunnel field-effect transistor (DG-TFET) with ultra-thin pocket doping has been thoroughly investigated and the performance analysis is studied. The incorporation of 2 nm of source and drain pocket doping results in substantial changes in electric field distribution and surface potential variation along the channel (two-dimensional). Nonlocal band-to-band tunneling (BTBT) model is used for simulation work. At supply voltage (VDD) of 0.5 V, the source pocket-doped tunnel FET (SP-TFET) produces better leakage current (IOFF) control, i.e., ambipolar conduction suppression, validated by analytical modeling. SP-TFET provides 30.08 mV/decade of subthreshold swing (SS) recorded best, which further improves ION/IOFF switching ratio. Two-dimensional numerical device simulator is used for the simulation work.KeywordsDG-TFETBand-to-band tunneling (BTBT)Subthreshold swing (SS)Source pocket dopingDrain pocket dopingSwitching ratio

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