Abstract
Abstract The recent interest in SiGe for multigate MOSFET design has demonstrated the possibility of alleviating many parasitic effects dominating at nanoscale regime. In the presented work, we focus on the performance analysis of nanoscale double gate MOSFET with a SiGe channel. The influence of introducing some structural modifications at the level of the device is shown namely the halo aspect, high-k gate stack and the dual metal gate technologies. The numerical experiments carried out using ATLAS-2D simulator confirm such enhancement with respect to a pure Si based channel device in terms of transconductance and output conductance. It is worth mentioning that other channel and gate engineering techniques deserve to be investigated in the context of SiGe multigate MOSFETs with the hope of further performance improvement
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