Effect of channel & gate engineering on Double Gate (DG) MOSFET-A comparative study

Abstract

Present work is the comparative study on the performance of Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with different channel and gate engineering. Five structures are analysed by keeping constant channel length. The short channel parameters like Sub threshold Swing (SS), Transconductance (g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> ), Electric Field, Surface Potential, Total Current Density, Output Conductance (g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> ) and characteristic curves are studied and compared between Fully Doped DG MOSFET (FD-DG-MOSFET), Un-Doped DG MOSFET (UD-DG-MOSFET), Graded Channel DG MOSFET (GC-DG-MOSFET), Dual Insulator DG MOSFET (DI-DG-MOSFET) and Gate Stack DG MOSFET (GS-DG-MOSFET). This work will extensively provide a device which gives rise to a high performance in circuit application. The simulation and parameter extraction have been done by using the commercially available device simulation software ATLAS™.