Performance Enhancement and Applications Review of Nano Light Emitting Device (LED)

Harel Perlman,Avi Karsenty,Tsion Eisenfeld

doi:10.3390/nano11010023

Harel Perlman, Avi Karsenty + Show 1 more

Open Access

https://doi.org/10.3390/nano11010023

Copy DOI

Journal: Nanomaterials	Publication Date: Dec 24, 2020
Citations: 7	License type: CC BY 4.0

Affiliation: Jerusalem College of Technology

Abstract

A nano light emitting device (LED) has been developed and is presented. This new LED, entitled LENS (Light Emitting Nano-pixel Structure), is a new nano-pixel structure designed to enable high-resolution display. It serves as the building block of a more complex structure called LENA (Light Emitting Nano-pixel Array), dedicated to nano-display applications, such as augmented and virtual reality (AVR). Previously designed and studied with a platform for ray tracing optimization, a complementary simulations study was performed using the Comsol Multi-Physics Platform in order to check for opto-electronics performance and physical nanoscale investigations. In addition to the physical complementary analysis, several studies have focused on optimizations: optimal geometry for a pixel (cylindrical or conical shape), and wavelength adaptation (optical communication). In addition to numerical simulation results, an analytical model has been developed. This new device holds the potential to enhance the light efficiency for military, professional and consumer applications, and can serve as a game changer in the world of nano-displays with high resolution.

Highlights

While the domain of micro-light-emitting diodes (μ-light emitting device (LED)) has become the focus of research for display applications [1], the world of nano-LEDs (n-LEDs) remains unexplored and several tentative approaches are still works in progress
While some teams are still focusing on more fundamental research on phase change materials between two layers [2], others are looking at more applied structures, like the structural and optical properties of InGaN/gallium nitride (GaN) quantum dots [3], nano-pixel matrix [4] and even nano-ring light-emitting diodes (NRLEDs) with different wall widths, fabricated by specialized nano-lithography technology [5]
Optimal shape and geometry influences were partially analyzed in the past in specific case studies, for example, while comparing three types of LED chips using different geometries of top surface on GaN p-n junction structures, such as domes [40] or triangular quantum barriers [41]

Summary

Introduction

While the domain of micro-light-emitting diodes (μ-LEDs) has become the focus of research for display applications [1], the world of nano-LEDs (n-LEDs) remains unexplored and several tentative approaches are still works in progress. While some teams are still focusing on more fundamental research on phase change materials between two layers [2], others are looking at more applied structures, like the structural and optical properties of InGaN/GaN quantum dots [3], nano-pixel matrix [4] and even nano-ring light-emitting diodes (NRLEDs) with different wall widths, fabricated by specialized nano-lithography technology [5]. When compared to the recent progress at the academy, looking at the advanced structures of nano-pixels and nano-display [6], several industrial technologies do not yet facilitate sub-micron pixels. Integral parts of these most well-known used technologies comprise the liquid crystal display (LCD) [7], the liquid crystal-on-silicon (LCOS) [8]

Methods

Results

Conclusion