Performance Comparison of High Resistivity Silicon, Silicon with Grounding Plane and Glass as Substrate of Ion Trap for Quantum Information Processing

Abstract

Surface electrode ion trap on different substrates (i.e., high-resistivity (HR) silicon, silicon with grounding plane, and glass) are designed and fabricated. Performance comparison of these substrates is carried out in terms of leakage current, parasitic capacitance and RF loss. It is found that ion trap fabricated on glass has superior RF performance, but the leakage current between center electrodes can be as high as 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-8</sup> A, limiting the maximum RF voltage allowed in the ion trap. For traps on silicon with grounding plane, on-chip insertion loss (S21) is reduced by ~4.6 dB and resonance peak power after packaging is improved by ~10 dBm, compared with traps on HR silicon. Ion trapping operation is carried out on glass traps, where a single ion can be trapped for several hours with Doppler cooling.