Development, Testing, and Integration of Silicon and Glass Substrates for Advanced Ion Trap Design

Abstract

Surface electrode ion trap is a promising candidate for quantum information processing (QIP), due to its feasibilities towards large-scale fabrication and on-chip electro-optical integration. In this paper, surface electrode ion traps on different substrates (e.g., high-resistivity silicon, silicon with ground plane and glass) are fabricated, assembled and tested. To simultaneously leverage the established fabrication technique of silicon and superior insulation property of glass, we further demonstrate a novel ion trap design with heterogenous integration of silicon and glass, acting respectively as ion trap and interposer substrates. The vertical connection between the silicon ion trap and the glass interposer is achieved by through silicon via (TSV) and micro bump. This silicon-glass integrated system advances the development of ion trap and enriches the toolbox of scalable QIP.