Abstract
Significant research work is carried out at present for performance enhancement of organic devices and circuits that has become now an alternative candidate of flexible electronics technology. This research paper includes the depth analysis of a dual gate organic thin film transistor (DG-OTFT) because it has better performance in comparison to single gate OTFT structure. Subsequently, the impact of different materials for top gate dielectric is carried out, wherein, one device uses Parylene as top insulator while other device uses plasma-enhanced atomic layer deposition (PEALD) aluminum oxide (Al2O3). The performance analysis of both DG-OTFT in terms of subthreshold slope, threshold voltage, current on-off ratio and mobility is carried out using Atlas 2-D numerical device simulator. Device with Parylene organic dielectric material is observed to have better performance in comparison to its counterpart. Besides this, a comparison of performance in various modes of dual gate OTFT operation is discussed in this paper. It is observed that the dual gate mode operation shows better performance in comparison to other modes of operation.
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