Abstract

In recent past, there has been massive research in the field of organic electronics. Many novel techniques are proposed for improving the device and circuit performance. The use of the dual gate organic thin film transistor (DG-OTFT) provides one such technique to enhance the overall performance of organic devices and circuits. The DG-OTFT not only boosts the performance of the device and circuit but also makes them robust. This research paper analyzes the in-depth behavior of the DG-OTFT for top gate, bottom gate and dual gate modes of operation in terms of drive current, mobility, threshold voltage, sub-threshold slope and current on-off ratio. The observed results show higher drive current in the dual gate mode due to formation of two channels resulting in higher carrier injection. The electrical characteristics and performance parameters of DG-OTFT based on PDPP-TNT as organic semiconductor are evaluated and validated with the reported experimental results. The simulation results are in close agreement with experimental data. Consequently, the static and dynamic behavior of organic SR latch based on all p-type DG-OTFT is investigated using organic module of Atlas 2-D numerical device simulator.

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