Abstract
Partition noise is closely related to reset noise and has been observed in detection nodes of reset transistor architecture in image sensors. This work presents the analysis of partition noise based on an improved technique for estimation of charge distribution in the transistor channel at any given time instant. We incorporate the transistor turn off transients by taking into account both drift and diffusion components of current. Using the improved model for charge distribution estimation, the partition noise generated at the onset of transistor pinch-off can be accurately determined. The accuracy is verified by making comparisons between the proposed model of partition noise and measured data.
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