Abstract
In most image sensor pixel architectures, signal detection involves the reset of charge in a capacitive node. This operation gives rise to reset noise, and in particular, partition noise. In modern day transistors, with the shrinkage of device critical dimensions and increase of clock frequency, reset noise impacts many aspects of active pixel sensor operation. An additional spurious noise component has been observed from the reset noise model that is closely related to the switching operation, and is known as partition noise. Partition noise has been found to relate closely to the fall times of the applied reset pulse. However, existing noise models assume a constant charge density at the onset of transistor pinch-off, thus resulting in an underestimation of partition noise. This work investigates the influence of reset noise and other related noise generation on active pixel sensor performance.
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