Abstract
Partition noise appears in conjunction with reset noise at the integration node of active pixel sensor architectures. This brief presents the modeling and measurement of partition noise based on an improved technique for charge profile estimation in the transistor channel at any given time instant. Transistor turn off transients are integrated into the model by taking into account both drift and diffusion components of current. Using the predictions of charge profile, partition noise generated during the transistor reset operation is accurately determined and verified with measured data.
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