Abstract
The dependence of the electrical conductivity on the oxygen partial pressure of alumina films produced by the Aerosol Deposition Method (ADM) was investigated. The samples were contacted in a three-electrode setup according to DIN IEC 60093:1993-12 for high insulating materials and the conductivity was measured as a function of the oxygen partial pressure between 650 °C and 900 °C. The conductivity increases with the oxygen partial pressure and thus shows p-type behavior. Constant final values are reached even at these low temperatures. In the double logarithmic representation, a slope of approx. 3/16 can be determined. Following a defect chemical approach for M2O3 (M represents a metal) and the assumption of Schottky disorder, a defect chemical model can be established.
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