Abstract
A novel resistive memory with the TiN/Ti/HfO x /TiN stack is proposed and fully integrated with 0.18 µm CMOS technology. The excellent memory performances such as low operation current (down to 25 µA), low operation voltage ( 100 M cycles), and reliable data retention (10 years extrapolation at 220°C). A 1 Kb array with robust characteristics was also fabricated successfully. The endurance for all devices can exceed 106 cycles by a pulse width of 40 ns. New verification methods, which give tight distribution for high resistance (R HIGH ) and low resistance (R LOW ), are proposed to ensure a good operation window. Due to the high density application, the ultra-high LRS nonlinearity (>1000), robust retention, and good endurance are demonstrated in the HfO X based CRS device with a simple structure.
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