Abstract
AbstractBipolar resistive switching memory devices with a TiN/MnO2/Pt structure were investigated in a low power operation (250 μA/±0.6 V). The devices showed good endurance of 105 cycles at a 1 μs pulse and reliable data retention at both RT and 125 °C. Moreover, the benefits of a high device yield and potential multilevel storage make them promising devices in next generation nonvolatile memory applications. The cell area dependency suggests that the conducting mechanism in the low resistance states is due to the formation of locally conducting filaments. The results demonstrate the feasibility of high performance resistive switching memory devices based on transition metal oxides by using TiN as the top electrode. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: physica status solidi (RRL) – Rapid Research Letters
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
