Resistive switching memory devices using ZnO nanoparticles encapsulated in polyvinyl alcohol (PVA) matrix

Abstract

In this work, metal/semiconductor nanocomposites/metal devices with aluminium (Al) as top electrode (TE) and bottom electrode (BE) were fabricated and investigated using ZnO nanoparticles (ZNPs) embedded in an insulating polyvinyl alcohol (PVA) matrix for non-volatile memory applications. The I-V measurements of Al/ZnO-PVA/Al device exhibited a non-volatile bistable resistive switching behaviour. The switching mechanism of the device was suggested by the models of trap controlled space-charge limited conduction (SCLC) and the charges trapping-detrapping process at the centers of ZNPs in the PVA matrix. The state of the device was maintained even after removal of the applied bias, indicating the non-volatile bistable memory. There was no remarkable degradation of the device in both the LRS and the HRS after 30 minutes continuous operation which demonstrated excellent stability of the device. The current ratio of high resistance state (HRS) to low resistance state (LRS) is about of the order of 102 at room temperature. This demonstration provides a class of memory devices for non-volatile bistable memory device applications.In this work, metal/semiconductor nanocomposites/metal devices with aluminium (Al) as top electrode (TE) and bottom electrode (BE) were fabricated and investigated using ZnO nanoparticles (ZNPs) embedded in an insulating polyvinyl alcohol (PVA) matrix for non-volatile memory applications. The I-V measurements of Al/ZnO-PVA/Al device exhibited a non-volatile bistable resistive switching behaviour. The switching mechanism of the device was suggested by the models of trap controlled space-charge limited conduction (SCLC) and the charges trapping-detrapping process at the centers of ZNPs in the PVA matrix. The state of the device was maintained even after removal of the applied bias, indicating the non-volatile bistable memory. There was no remarkable degradation of the device in both the LRS and the HRS after 30 minutes continuous operation which demonstrated excellent stability of the device. The current ratio of high resistance state (HRS) to low resistance state (LRS) is about of the order of 102 at room ...