Abstract
In this work, metal/oxide/metal capacitors were fabricated and investigated using transparent boron doped zinc oxide (ZnO:B) films for resistance switching memory applications. The optical band gap of ZnO:B films was determined to be about 3.26 eV and the average value of transmittance of ZnO:B films was about 91% in the visible light region. Experimental results indicated that the resistance switching in the W/ZnO:B/W structure is nonpolar. The resistance ratio of high resistance state (HRS) to low resistance state (LRS) is about of the order of 105 at room temperature. According to the temperature dependence of current-voltage characteristics, the conduction mechanism in ZnO:B films is dominated by hopping conduction and Ohmic conduction in HRS and LRS, respectively. Therefore, trap spacing (1.2 nm) and trap energy levels in ZnO:B films could be obtained.
Highlights
Zinc oxide (ZnO) has a wide direct bandgap energy of 3.37 energy level (eV), which makes it transparent in visible light and is a promising candidate for blue and ultraviolet light emitting devices (LEDs) and lasers [1]
The optical band gap of zinc oxide (ZnO):B films is determined by Tuac’s plot, namely, the linear part of the2 curve is extrapolated toward the energy hν axis at2 = 0
Deep-level traps participate in hopping conduction in high resistance state (HRS), whereas shallow-level traps participate in Ohmic conduction in low resistance state (LRS)
Summary
Zinc oxide (ZnO) has a wide direct bandgap energy of 3.37 eV, which makes it transparent in visible light and is a promising candidate for blue and ultraviolet light emitting devices (LEDs) and lasers [1]. After doping of group III elements, ZnO becomes attractive to replace indium tin oxide (ITO) as the transparent conducting electrodes in liquid crystal displays or solar cell devices because of abundant raw material, simple manufacturing process with low cost, low synthetic temperature, competitive optical and electrical properties, nontoxicity and stability in plasma [2]. A metal-oxide-metal structure was fabricated and investigated using transparent boron doped zinc oxide (ZnO:B) films for the application of resistance random access memory (RRAM). The merits of RRAM include high switching speed, high operation durability, small cell size, simple cell structure, multi-state switching and three-dimensional architecture [8,9,10,11]
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