Trap exploration of ZnO-based resistance switching memory devices

Abstract

The trap exploration of Pt/ZnO/Pt memory cells was made. Based on the temperature dependence of I-V characteristics, the conduction mechanisms in ZnO films are dominated by the hopping conduction and ohmic conduction in high-resistance state (HRS) and low-resistance state (LRS), respectively. Simulation results show that the trap spacing and trap energy level in HRS are around 2 nm and 0.46 eV, respectively. Also, the Fermi level, the electron mobility, and the effective density of states in conduction band in LRS in ZnO films are extracted.