Abstract
Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics. In this study, a new resistive switching material structure, TiOx/silver nanoparticles/TiOx/AlTiOx, fabricated between the fluorine-doped tin oxide bottom electrode and the indium tin oxide top electrode is demonstrated. The device exhibits excellent memory performances, such as low operation voltage (<±1 V), low operation power, small variation in resistance, reliable data retention, and a large memory window. The current-voltage measurement shows that the conducting mechanism in the device at the high resistance state is via electron hopping between oxygen vacancies in the resistive switching material. When the device is switched to the low resistance state, conducting filaments are formed in the resistive switching material as a result of accumulation of oxygen vacancies. The bottom AlTiOx layer in the device structure limits the formation of conducting filaments; therefore, the current and power consumption of device operation are significantly reduced.
Highlights
Yi-Jen Huang,[1] Tzu-Hsien Shen,[2] Lan-Hsuan Lee,[2] Cheng-Yen Wen,[2,3] and Si-Chen Lee1,a 1Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan 2Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan 3Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10617, Taiwan (Received 22 April 2016; accepted 16 June 2016; published online 23 June 2016). Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics
Digital information is stored in RRAM by changing the resistance of the resistive switching layer, which is an insulating thin film located between the electrodes in the RRAM device
It is generally accepted that an applied voltage can form and rupture conducting filaments in the resistive switching layer, so as to switch the RRAM device between low-resistance state (LRS) and high-resistance state (HRS), respectively
Summary
Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics. The current-voltage measurement shows that the conducting mechanism in the device at the high resistance state is via electron hopping between oxygen vacancies in the resistive switching material. When the device is switched to the low resistance state, conducting filaments are formed in the resistive switching material as a result of accumulation of oxygen vacancies.
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