Abstract
A long-range order of Al0.5Ga0.5P layers grown by electron beam epitaxy on a (100) GaP substrate has been detected. Surfaces of Al layers deposited by vacuum evaporation on GaP wafers were irradiated with a fluence of (1–5)×1017 electrons cm−2 at 7 MeV and 50 °C. It is speculated that since a great number of electron-hole pairs are created, the strong enhancement of the diffusion of Al atoms may be caused by the energy release mechanism and an Al interstitial may preferably occupy a Ga site by the ‘‘kick-out’’ mechanism and for the formation of much stabler bonds between group III and V atoms.
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