Abstract
Solid phase epitaxial layers of Al0.25Ga0.75P, Al0.5Ga0.5P, and Al0.75Ga0.25P were grown on (111), (100), and (110) GaP substrates, respectively, by using an electron beam epitaxy technique at 50 °C. The surfaces of Al layers deposited by vacuum evaporation on GaP wafers were irradiated with a fluence of (0.1–1.0)×1018 electrons cm−2 at 7 MeV. After the irradiation and removal of the Al layers, evidence of the creation of epilayers that had been formed before annealing was obtained from a secondary-ion mass spectrometer, an x-ray diffractometer, and a reflection high-energy electron diffractometer.
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