Abstract
The optoelectronic behavior of an InP/InGaAs HEMT with semitransparent gate is presented. The gate is meander-shaped to get a square layout of the transistor. The introduction of an InGaAs absorption layer between the gate contact and the DEG channel results in a very high d.c. response of 15.4 A/W at 1.3 μm wavelength light. r.f. measurements up to 20 GHz demonstrate the potential of our concept for high frequency applications.
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