1850 A/W responsivity in optically controlled MOSFET by illumination of 1.5 μm wavelength light

Abstract

The gate length dependencies of the optical response characteristics in the optically controlled MOSFET have measured. This device was the integrated structure of absorption region and MOSFET region by using direct wafer bonding technique. By reducing the gate length of MOSFET region, the transconductance of FET channel was increased, and we obtained high current modulation and responsivity by irradiation of 1.5 micrometer wavelength light.