Photocurrent characteristics of solution-processed HgTe nanoparticle thin films under the illumination of 1.3 µm wavelength light

Abstract

The photocurrent characteristics of HgTe nanoparticle (NP) thin films fabricated on glass substrates were investigated under the illumination of 1.3 µm wavelength light in this work. The photocurrent obtained from an NP thin film with a vertical structure was 119 µA in magnitude at an applied voltage of 2 V. The magnitude of the photocurrent for an NP thin film with a lateral structure was 23.8 nA at 10 V. Nevertheless, the relative magnitude of the photocurrent measured as a function of the chopping frequency was largely the same for the thin films with both the lateral and the vertical structures. The frequency-dependent photocurrent mechanism of the NP thin films will be discussed in detail in this paper.