Abstract
Contactless electroreflectance was measured at room temperature to characterize a wide range of the possible optical transitions in ZnxCd1−xSe∕Znx′Cdy′Mg1−x′−y′Se multi-quantum-well structures grown by molecular beam epitaxy. Based on these measurements, the authors predict and then verify the anticipated intersubband transition energies. They investigate a representative Zn0.5Cd0.5Se∕Zn0.20Cd0.19Mg0.61Se structure, for which the E1-E2 transition energy is predicted to be 178meV (6.97μm). Intersubband absorption using Fourier transform infrared spectroscopy exhibits a peak at 180meV (6.89μm), in excellent agreement with the contactless electroreflectance measurements.
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