Abstract
An 8nm thick strained silicon layer embedded in relaxed Si0.8Ge0.2 has been grown on SiGe on insulator substrate in order to reduce the optical response of dislocations present in the SiGe virtual substrate. Photoreflectance measurement shows bandgap shrinkage at Γ point of 0.19eV which corresponds to a 0.94% strain value close to the one measured in Raman spectroscopy. The luminescence arising only from the strained Si quantum well in high injection conditions reveals clearly two optical transitions observed at 0.959 and 1.016eV.
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