Abstract
Radio-frequency magnetron sputter epitaxy was employed for the synthesis of Si m Ge n Si(001) strained-layer superlatices and of modulation doped, strained Si quantum wells on relaxed Si 0.7Ge 0.3. Raman spectroscopy was used to demonstrate that the Ge layers of a Si 30 Ge 6 Si(001) superlattice are fully strained and that surprisingly sharp Si Ge interfaces of ∼ 2–4 ML extension result from the sputter epitaxy. Magnetotransport measurements on Si quantum well structures at T = 1.6 K proved the presence of a two-dimensional e electron gas with a mobility of 15 800 cm 2 V −1 s −1 and allowed the observation of the integer quantum Hall effect.
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