Abstract
In this paper, with solid source molecular beam epitaxy technique, Si 1-x Ge x( SiGe ) virtual substrates were deposited on low-temperature-grown Si (LT- Si ) buffer layer, which was doped with Sb . The strain in SiGe virtual substrate was characterized by high resolution X-ray diffraction. Results indicated that Sb -doping in LT- Si can effectively modulate the degree of strain relaxation in SiGe virtual substrate. The segregated Sb on the surface of LT- Si layer acts as surfactant and results in abrupt strain relaxation.
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