Abstract
We have investigated the optical and electrical properties of Bi- or Tl-doped Pb 1− x (Mg 1− y Sr y ) x S thin films. The films with carrier concentration sufficient for use as cladding layers in a laser diode, were obtained by doping with Bi as n-type impurity or Tl as p-type impurity. Optical absorption was observed at far-infrared region on the Bi-doped films, and the relation between absorption coefficient α and carrier concentration n was found to be expressed as α=0.27 n 0.21 at 6 μm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
