Abstract
We have investigated the fabrication of Pb 1− x Mg x S thin films on BaF 2 substrates by using hot-wall epitaxy. Mg concentration x and its deviations from stoichiometry in the Pb 1 −x Mg x S thin films were controlled by monitoring the growth conditions. We found a widened solubility range of Mg in the Pb 1 −x Mg x S thin film as compared to the same range obtained for bulk growth. The values of the energy band gap of the films increased with increasing x. The relation between the energy band gap E g and the composition x of the Pb 1 −x Mg x S thin films follows the expression E g=0.417+1.111 x−0.861 x 2 ( x⩽0.12). The information obtained here will be useful for future preparation of Pb 1− x Mg x S 1− y Se y or Pb 1− x (Mg 1− y Sr y ) x S quaternary films for fabrication of mid-infrared lasers.
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