Abstract
Zn x Cd1−x S (x = 0.15, 0.44, 0.62, 0.80, and 0.95) thin films of about 340 nm in thickness were deposited on indium-tin-oxide (ITO)-coated glass substrates by using thermal evaporation of high-purity ZnS and CdS mixed tablets in high vacuum. X-ray diffraction spectra showed that the Zn x Cd1−x S thin films were preferentially grown along the (111) orientation. The Zn x Cd1−x S crystal structure was a mixture structure of the ZnS and the CdS cubic zincblende structures with lattice constants a = 5.670 A to a = 5.734 A for CdS and a = 5.437 A for ZnS. The (αhν)2 vs. hν plots for the Zn x Cd1−x S thin films showed that all samples had direct transition band gaps. The energy band gaps of the Zn x Cd1−x S thin films increased monotonically from 2.45 eV for x = 0.15 to 3.37 eV for x = 0.95. The dynamical behavior of the charge carriers in the Zn x Cd1−x S thin films was investigated by using the photoinduced discharge characteristics (PIDC) technique.
Published Version
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